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US 2012/0056266 A1Published application
Semiconductor device and manufacturing method thereof
AssigneePanasonic Corporation
InventorsKeita UCHIYAMA, Kenji Yoneda
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Abstract
A semiconductor device includes a plurality of gate insulating films formed on a semiconductor substrate. Of the plurality of gate insulating films, the gate insulating film having a smallest thickness in an HP transistor formation region is a silicon oxide film, and each of the remaining gate insulating films in an I/O transistor formation region and an LP transistor formation region is a silicon oxynitride film.
Claims9
A semiconductor device, comprising:
- a plurality of gate insulating films formed on a semiconductor substrate, wherein
- one of the plurality of gate insulating films having a smallest thickness is a first stacked film that is formed by sequentially stacking, from bottom to top, a silicon oxide film and an insulating film having a higher dielectric constant than the silicon oxide film, and
- each of the plurality of gate insulating films other than the one having the smallest thickness is a second stacked film formed by sequentially stacking, from bottom to top, a silicon oxynitride film and an insulating film having a higher dielectric constant than the silicon oxide film and the silicon oxynitride film, the semiconductor device further comprising:
- a metal gate electrode formed on the first stacked film and the second stacked film.
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A method for manufacturing a semiconductor device, comprising the steps of:
- (a) forming a plurality of silicon oxide films on a semiconductor substrate;
- (b) introducing nitrogen into the plurality of silicon oxide films to form a plurality of silicon oxynitride films;
- (c) removing one of the plurality of silicon oxynitride films having a smallest thickness;
- (d) forming a silicon oxide film in a portion where the silicon oxynitride film having the smallest thickness has been removed in the step (c);
- (e) forming an insulating film having a higher dielectric constant than the silicon oxide films and the silicon oxynitride films, on each of the plurality of silicon oxynitride films remaining after removing the silicon oxynitride film having the smallest thickness, and on the silicon oxide film formed in the step (d);
- and
- (f) forming a metal gate electrode on the insulating film having the higher dielectric constant than the silicon oxide films and the silicon oxynitride films.
4 more elements
Dependencies are inferred from the claim text.