Method for forming and structure of a recessed source/drain strap for a mugfet

A semiconductor structure comprising:

• an insulator layer on a substrate;
• a plurality of parallel fins above said insulator layer, relative to a bottom of said semiconductor structure, each of said fins comprising a central semiconductor portion and conductive end portions;
• at least one conductive strap positioned within said insulator layer below said fins, relative to said bottom of said structure, said conductive strap being perpendicular to said fins and electrically connecting and contacting said fins, said conductive strap producing physical strain within said central semiconductor portion of said fins, said at least one conductive strap including:
• recessed portions disposed within said insulator layer, below said plurality of parallel fins, relative to said bottom of said structure, and between each of said plurality of parallel fins, and
• projected portions extending into said fins, collinear with each of said plurality of parallel fins, relative to said bottom of said structure;
• a gate dielectric contacting and covering said central semiconductor portion of said fins;
• and
• a gate conductor covering and contacting said gate dielectric,
• wherein said at least one conductive strap electrically connects and contacts said fins,
• wherein said at least one conductive strap produces a physical strain within said central semiconductor portion of said plurality of parallel fins, and
• wherein said conductive strap is disposed in at least one of a source and a drain region of said semiconductor structure.

A method for creating a semiconductor structure comprising:

• providing an insulator layer on a substrate;
• patterning said insulator layer to form at least one recess in said insulator layer;
• forming at least one conductive strap within said recess in said insulator layer;
• patterning a plurality of parallel fins above said insulator layer, relative to a bottom of said structure, each of said fins comprising a central semiconductor portion and conductive end portions, said conductive strap being positioned within said insulator layer below said fins, relative to said bottom of said structure, said conductive strap being perpendicular to said fins and contacting said fins, and said conductive strap comprising projected portions extending into said fins, collinear with each of said plurality of fins, relative to said bottom of said structure;
• forming a gate dielectric contacting and covering said central semiconductor portion of said fins;
• and
• forming a gate conductor covering and contacting said gate dielectric,
• wherein said conductive strap is disposed in at least one of a source and a drain region of said semiconductor structure.

A method for creating a semiconductor structure comprising:

• providing an insulator layer on a substrate;
• patterning said insulator layer to form at least one recess in said insulator layer;
• forming at least one conductive strap within said recess in said insulator layer;
• patterning a plurality of parallel fins above said insulator layer, relative to a bottom of said structure, each of said fins comprising a central semiconductor portion and conductive end portions, said conductive strap being positioned within said insulator layer below said fins, relative to said bottom of said structure, said conductive strap being perpendicular to said fins and contacting said fins, and said conductive strap comprising projected portions extending into said fins, collinear with each of said plurality of fins, relative to said bottom of said structure;
• forming a gate dielectric contacting and covering said central semiconductor portion of said fins;
• and
• forming a gate conductor covering and contacting said gate dielectric,
• wherein said conductive strap is disposed in at least one of a source and a drain region of said semiconductor structure,
• wherein said at least one conductive strap produces a physical strain within said central semiconductor portion of said plurality of parallel fins, and
• wherein said conductive strap is disposed in at least one of a source and a drain region of said semiconductor structure.