Semiconductor device

Abstract

According to one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a third semiconductor layer of the first conductivity type, an embedded electrode, a control electrode, a fourth semiconductor layer of the second conductivity type, a first main electrode, and a second main electrode. The second semiconductor layer is provided on the first semiconductor layer. The third semiconductor layer is provided on the second semiconductor layer. The embedded electrode is provided in a first trench via a first insulating film. The first trench penetrates through the second semiconductor layer from a surface of the third semiconductor layer to reach the first semiconductor layer. The control electrode is provided above the embedded electrode via a second insulating film in the first trench. The fourth semiconductor layer is selectively provided in the first semiconductor layer and is connected to a lower end of a second trench. The second trench penetrates through the second semiconductor layer from the surface of the third semiconductor layer to reach the first semiconductor layer. The first main electrode is electrically connected to the first semiconductor layer. The second main electrode is provided in the second trench and connected to the second semiconductor layer, the third semiconductor layer and the fourth semiconductor layer. The embedded electrode is electrically connected to one of the second main electrode and the control electrode. A Schottky junction formed of the second main electrode and the first semiconductor layer is formed at a sidewall of the second trench.

Dependencies are inferred from the claim text.