Dynamic schottky barrier mosfet device and method of manufacture
AssigneeAvolare 2, LLC
InventorsJohn P. Snyder, John M. Larson
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Abstract
A device for regulating a flow of electric current and its manufacturing method are provided. The device includes metal-insulator-semiconductor source-drain contacts forming Schottky barrier or Schottky-like junctions to the semiconductor substrate. The device includes an interfacial layer between the semiconductor substrate and a metal source and/or drain electrode, thereby dynamically adjusting a Schottky barrier height by applying different bias conditions. The dynamic Schottky barrier modulation provides increased electric current for low drain bias conditions, reducing the sub-linear turn-on characteristic of Schottky barrier MOSFET devices and improving device performance.
Claims6
A MOSFET device comprising:
- a gate electrode on a semiconductor substrate;
- a source electrode and a drain electrode on the semiconductor substrate, wherein at least one of the source electrode and the drain electrode is metal;
- and
- an interfacial layer between the substrate and at least one of the metal source and drain electrodes.
Dependencies are inferred from the claim text.