Semiconductor compound structure and method of fabricating the same using graphene or carbon nanotubes, and semiconductor device including the semiconductor compound structure
AssigneeSamsung Electronics Co., Ltd.
InventorsJun-hee CHOI, Un-jeong KIM, Sang-jin LEE
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Abstract
A semiconductor compound structure and a method of fabricating the semiconductor compound structure using graphene or carbon nanotubes, and a semiconductor device including the semiconductor compound structure. The semiconductor compound structure includes a substrate; a buffer layer disposed on the substrate, and formed of a material including carbons having hexagonal crystal structures; and a semiconductor compound layer grown and formed on the buffer layer.
Claims30
A semiconductor compound structure comprising:
- a substrate;
- a buffer layer disposed on the substrate, and comprising carbons having hexagonal crystal structures;
- and
- a semiconductor compound layer formed on the buffer layer.
A method of fabricating a semiconductor compound structure, the method comprising:
- preparing an amorphous substrate;
- forming a buffer layer comprising carbons having hexagonal crystal structures on the amorphous substrate;
- and
- forming a semiconductor compound layer on the buffer layer.
A semiconductor device comprising:
- a substrate;
- a lower electrode disposed on the substrate;
- a buffer layer disposed on the lower electrode, and comprising carbons having hexagonal crystal structures;
- a light emission layer formed on the buffer layer, and formed of a semiconductor compound;
- an insulating layer formed to bury a lower portion of the light emission layer on the buffer layer;
- and
- an upper electrode formed to cover the light emission layer and the insulating layer.
Dependencies are inferred from the claim text.