Semiconductor light emitting device and method for manufacturing same

A method for manufacturing a semiconductor light emitting device, comprising:

• forming an intermediate layer on a structural body including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, the intermediate layer being formed on the second semiconductor layer in ohmic contact with the second semiconductor layer;
• forming a metal layer on the intermediate layer;
• creating a microdomain pattern by coating a composition including a block copolymer onto at least a portion of a surface of the metal layer and performing phase separation of the block copolymer;
• and
• forming an electrode layer having a plurality of opening portions by etching the metal layer using the microdomain pattern as a mask, an equivalent circular diameter of each of the opening portions being not less than 10 nanometers and not more than 5 micrometers.

A method for manufacturing a semiconductor light emitting device, comprising:

• forming an intermediate layer on a structural body including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, the intermediate layer being formed on the second semiconductor layer in ohmic contact with the second semiconductor layer;
• forming a metal layer on the intermediate layer;
• forming a resist film on the metal layer;
• making a plurality of recessed portions in the resist film by pressing a protruding portion of a stamper onto the resist film;
• and
• forming an electrode layer having a plurality of opening portions in the metal layer by etching the metal layer using the resist having the recessed portions as a mask, an equivalent circular diameter of each of the opening portions being not less than 10 nanometers and not more than 5 micrometers.