Semiconductor light emitting device and method for manufacturing same

A semiconductor light emitting device, comprising:

• a first semiconductor layer of a first conductivity type;
• a second semiconductor layer of a second conductivity type including a recessed portion and a protruding portion, the recessed portion being provided on a side of the second semiconductor layer opposite to the first semiconductor layer, the protruding portion protruding from the recessed portion along a direction from the first semiconductor layer toward the second semiconductor layer, an equivalent circular diameter of a configuration of the protruding portion as viewed from the direction being not less than 10 nanometers and not more than 5 micrometers;
• a light emitting layer provided between the first semiconductor layer and the second semiconductor layer;
• a first electrode layer including a metal portion filled into the recessed portion;
• and
• a second electrode layer electrically connected to the first semiconductor layer.

A method for manufacturing a semiconductor light emitting device, comprising:

• forming a first semiconductor layer of a first conductivity type, forming a light emitting layer on the first semiconductor layer, forming a second semiconductor layer of a second conductivity type on the light emitting layer, and forming a metal layer on the second semiconductor layer;
• forming a mask pattern on the metal layer;
• and
• forming an electrode layer including a plurality of opening portions by etching the metal layer using the mask pattern as a mask, and making a recessed portion recessed from a bottom portion of the plurality of opening portions by etching the second semiconductor layer, an equivalent circular diameter of the plurality of opening portions being not less than 10 nanometers and not more than 5 micrometers.

A method for manufacturing a semiconductor light emitting device, comprising:

• forming a first semiconductor layer of a first conductivity type, forming a light emitting layer on the first semiconductor layer, and forming a second semiconductor layer of a second conductivity type on the light emitting layer;
• forming a mask pattern on the second semiconductor layer;
• making a recessed portion in the second semiconductor layer by etching the second semiconductor layer using the mask pattern as a mask, and forming a protruding portion to protrude from the recessed portion along a direction from the first semiconductor layer toward the second semiconductor layer, an equivalent circular diameter of a configuration of the protruding portion as viewed from the direction being not less than 10 nanometers and not more than 5 micrometers;
• and
• filling a metal layer into the recessed portion.