Solid state lighting dies with quantum emitters and associated methods of manufacturing
AssigneeMicron Technology, Inc.
InventorsCem Basceri, Casey Kurth, Thomas Gehrke, Kevin Tetz
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Abstract
Solid state lighting dies and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting die includes a substrate material, a first semiconductor material, a second semiconductor material, and an active region between the first and second semiconductor materials. The second semiconductor material has a surface facing away from the substrate material. The solid state lighting die also includes a plurality of openings extending from the surface of the second semiconductor material toward the substrate material.
Claims37
A solid state lighting die, comprising:
- a substrate material;
- a plurality of emitters on the substrate material, the individual emitters including:
- a first semiconductor element;
- a second semiconductor element spaced apart from the first semiconductor element;
- an active element directly between the first and second semiconductor elements, the active region including at least one of (a) indium gallium nitride single quantum well, (b) gallium nitride (GaN)/indium gallium nitride (InGaN) multiple quantum wells, and (c) an InGaN bulk material;
- and
- an insulating material on the substrate material, the insulating material having a plurality of portions individually between adjacent emitters.
A solid state lighting die, comprising:
- a substrate material;
- a first semiconductor material on the substrate material;
- a second semiconductor material spaced apart from the first semiconductor material;
- an active region between the first and second semiconductor materials;
- and
- a plurality of openings extending from a surface of the second semiconductor material toward the substrate material through the active region.
A method for forming a solid state lighting die, comprising:
- forming a first semiconductor material, an active region, and a second semiconductor material on a substrate material in sequence;
- depositing a masking material onto the surface of the second semiconductor material;
- patterning the masking material to define a plurality of openings that individually expose a portion of a surface of the second semiconductor material;
- and
- removing material from at least the second semiconductor material and the active region via the plurality of openings.
A method for forming a solid state lighting die, comprising:
- forming a masking material on a substrate material, the masking material including a plurality of openings individually exposing a portion of the substrate material;
- and
- forming an active region on the exposed portions of the substrate material, the active region including at least one of (a) indium gallium nitride single quantum well, (b) gallium nitride (GaN)/indium gallium nitride (InGaN) multiple quantum wells, and (c) an InGaN bulk material.
A method for forming a solid state lighting die, comprising:
- forming a masking material on a substrate material, the masking material including a plurality of openings individually exposing a portion of the substrate material;
- removing the portion of the substrate material via the openings, thereby creating a plurality of indentations in the substrate material;
- depositing an insulating material into the indentations;
- and
- thereafter, forming an active region on the substrate material with the insulating material in the indentations.
A solid state lighting device, comprising:
- a support structure;
- a solid state lighting die disposed in the support structure;
- and
- a converter material on the solid state lighting die;
- wherein the solid state lighting die including:
- a first semiconductor material;
- a second semiconductor material spaced apart from the first semiconductor material, the second semiconductor material having a surface facing away from the first semiconductor material;
- an active region between the first and second semiconductor materials;
- and
- a plurality of openings extending from the surface of the second semiconductor material toward the first semiconductor material.
Dependencies are inferred from the claim text.