Semiconductor device and method for fabricating the same

A method for fabricating a semiconductor device comprising:

• forming a first semiconductor layer of a first conductivity type by epitaxial growth on a semiconductor substrate of the first conductivity type;
• forming a second semiconductor layer of a second conductivity type on the first semiconductor layer;
• implanting impurity ions from a part of surface of the second semiconductor layer to reach an inside of the first semiconductor layer to form a first semiconductor region of the second conductivity type in a region of the second semiconductor layer in which the impurity ions are not implanted and a second semiconductor region of the second conductivity type in a region of the first and second semiconductor layers in which the impurity ions are implanted, having an impurity concentration higher than that of the first semiconductor region;
• forming a first electrode on a part of the first semiconductor region and the second semiconductor region;
• and
• forming a second electrode on a rear surface of the semiconductor substrate.