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US 2012/0056192 A1Published application
Compound semiconductor image sensor
AssigneeSamsung Electronics Co., Ltd.
InventorsJung-gyu NAM, Sang-cheol PARK, Kyu-sik KIM, Young-jun PARK
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Abstract
A stack-type image sensor using a compound semiconductor. The stack-type image sensor includes a stack of photoelectric conversion units which are sequentially arranged in a light incident direction and which absorb light in ascending order of a wavelength from shortest to longest.
Claims9
An image sensor comprising:
- a multi-layered I-III-VI-based photoelectric conversion unit which absorbs light of wavelength bands in steps;
- and
- a substrate which supports the multi-layered I-III-VI-based photoelectric conversion unit,
- wherein the multi-layered I-III-VI-based photoelectric conversion unit comprises:
- a first photoelectric conversion unit including a I-III-VI-based material layer which absorbs light of a first wavelength band;
- a second photoelectric conversion unit including a I-III-VI-based material layer which absorbs light of a second wavelength band longer than the first wavelength band;
- and
- a third photoelectric conversion unit including a I-III-VI-based material layer which absorbs light of a third wavelength band longer than the second wavelength band, and
- wherein the first photoelectric conversion unit includes a CuGaS2 layer, the second photoelectric conversion unit includes a CuGa(1-x)FexS2 layer (0.059≦x≦0.069), and the third photoelectric conversion unit includes a CuGa(1-y)FeyS2 layer (0.123≦y≦0.133).
6 more elements
Dependencies are inferred from the claim text.