Semiconductor device, method of manufacturing the same, and power supply apparatus
AssigneeFujitsu Limited
InventorsHiroshi Endo, Tadahiro Imada, Kenji Imanishi, Toshihide Kikkawa
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Abstract
A semiconductor device includes a GaN electron transport layer provided over a substrate; a first AlGaN electron supply layer provided over the GaN electron transport layer; an AlN electron supply layer provided over the first AlGaN electron supply layer; a second AlGaN electron supply layer provided over the AlN electron supply layer; a gate recess provided in the second AlGaN electron supply layer and the AlN electron supply layer; and a gate electrode provided over the gate recess.
Claims20
A semiconductor device comprising:
- a GaN electron transport layer provided over a substrate;
- a first AlGaN electron supply layer provided over the GaN electron transport layer;
- an AlN electron supply layer provided over the first AlGaN electron supply layer;
- a second AlGaN electron supply layer provided over the AlN electron supply layer;
- a gate recess provided in the second AlGaN electron supply layer and the AlN electron supply layer;
- and
- a gate electrode provided over the gate recess.
A power supply apparatus comprising:
- a high-voltage circuit;
- a low-voltage circuit;
- and
- a transformer that is provided between the high-voltage circuit and the low-voltage circuit;
- the high-voltage circuit that includes a transistor, the transistor including:
- a GaN electron transport layer provided over a substrate;
- a first AlGaN electron supply layer provided over the GaN electron transport layer;
- an AlN electron supply layer provided over the first AlGaN electron supply layer;
- a second AlGaN electron supply layer provided over the AlN electron supply layer;
- a gate recess provided in the second AlGaN electron supply layer and the AlN electron supply layer;
- and
- a gate electrode provided over the gate recess.
A method of manufacturing a semiconductor device comprising:
- forming a GaN electron transport layer over a substrate;
- forming a first AlGaN electron supply layer over the GaN electron transport layer;
- forming an AlN electron supply layer over the first AlGaN electron supply layer;
- forming a second AlGaN electron supply layer over the AlN electron supply layer;
- forming a gate recess in the second AlGaN electron supply layer and the AlN electron supply layer;
- and
- forming a gate electrode over the gate recess.
Dependencies are inferred from the claim text.