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AssigneesPromerus, LLC, Merck Patent GmbH
InventorsDavid Christoph Mueller, Toby Cull, Pawel Miskiewicz, Miguel Carrasco-Orozco, Andrew Bell, Edmund Elce, Larry F. Rhodes, Kazuyoshi Fujita, Hendra Ng, Pramod Kandanarachchi, Steven Smith
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Embodiments in accordance with the present invention provide for the use of polycycloolefins in electronic devices and more specifically to the use of such polycycloolefins as gate insulator layers used in the fabrication of electronic devices, the electronic devices that encompass such polycycloolefin gate insulator and processes for preparing such polycycloolefin gate insulator layers and electronic devices encompassing such layers.
A gate insulator layer that is in contact with an organic semiconductor layer in an organic electronic device, said gate insulator layer comprising a polycycloolefinic polymer.
An organic electronic device comprising a gate insulator layer that is in contact with an organic semiconductor layer, said gate insulator layer comprising a polycycloolefinic polymer.
A process for preparing a bottom gate OFET which comprises the following steps:
A process for preparing a top gate OFET which comprises the following steps:
A polymer composition comprising a polycycloolefinic polymer that contains one or more repeating units having a crosslinkable pendent group, an adhesion promoter comprising a surface-active functional group and a crosslinkable functional group that is capable of reacting with the said crosslinkable group of the repeating unit of the polymer or polymer composition.
A polymer composition for forming an organic gate insulating layer, said composition comprising a solvent, a norbornene-type polymer and one or more of a crosslinking agent, a UV sensitizer and an adhesion promoter.
A polymer composition for forming an organic gate insulating layer, said composition comprising a solvent and a norbornene-type polymer which comprises repeating units derived from a norbornene-type monomer selected from BuNB, HexNB, OctNB, DecNB, NBC4F9 or PPVENB
A polymer composition for forming an organic gate insulating layer, said composition comprising a solvent and a norbornene-type polymer which comprises repeating units derived from a norbornene-type monomer selected from BuNB, HexNB, OctNB or DecNB,
A polymer composition for forming an organic gate insulating layer, said composition comprising a solvent and a norbornene-type polymer which comprises repeating units derived from a norbornene-type monomer selected from EONB, MGENB, DMMIMeNB, DMMIEtNB, DMMIPrNB, DMMIBuNB and DMMIHxNB
Dependencies are inferred from the claim text.