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US 2012/0056173 A1Published application
Staggered thin film transistor and method of forming the same
AssigneeApplied Materials, Inc.
InventorFabio PIERALISI
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Abstract
A staggered thin film transistor and a method of forming the staggered thin film transistor are provided. The thin film transistor includes an annealed layer stack including an oxide containing layer, a copper alloy layer deposited on the conductive oxide layer, a copper containing oxide layer, and a copper containing layer.
Claims20
1) A staggered thin film transistor, comprising:
- an annealed layer stack comprising:
- an oxide containing layer;
- a copper alloy layer deposited on the oxide containing layer;
- a copper containing oxide layer;
- and
- a copper containing layer.
3 more elements
10) A method of forming a staggered thin film transistor, comprising:
- providing an oxide containing layer of the thin film transistor;
- depositing a copper alloy layer on the oxide containing layer;
- depositing a copper containing oxide layer on the copper alloy layer;
- depositing a copper containing layer on the copper containing oxide layer;
- and
- annealing the oxide containing layer, the copper alloy layer, the copper containing oxide layer and the copper containing layer.
3 more elements
Dependencies are inferred from the claim text.