Back to results
US 2012/0056159 A1Published application
Controlled quantum dot growth
AssigneeEmpire Technology Development LLC
InventorEZEKIEL KRUGLICK
Life of this patent
Estimating the term…
Abstract
The present disclosure generally relates to techniques for controlled quantum dot growth as well as a quantum dot structures. In some examples, a method is described that includes one or more of providing a substrate, forming a defect on the substrate, depositing a layer on the substrate and forming quantum dots along the defect.
Claims29
A quantum dot device comprising:
- a substrate having a defect region formed in a pattern along a surface of the substrate, and
- a plurality of quantum dots positioned predominantly along an edge of the defect region, wherein the quantum dot positions are based at least in part on the pattern.
A semiconductor device comprising:
- a substrate having a defect;
- and
- a plurality of quantum dots formed along an edge of the defect, wherein the formation of the quantum dots is based at least in part on a location of the defect, and wherein the quantum dots are substantially confined to the location of the defect.
An electrical device comprising:
- a substrate having a defect along a predetermined geometry;
- a plurality of quantum dots formed along an edge of the defect, wherein the plurality of quantum dots are confined to a location of the defect;
- and
- a plurality of electrical connections formed around the plurality of quantum dots.
1 more element
Dependencies are inferred from the claim text.