Semiconductor light emitting device and method for manufacturing same

A method for manufacturing a semiconductor light emitting device, the device including:

• an n-type layer including a nitride semiconductor, a p-type layer including a nitride semiconductor, and a light emitting unit provided between the n-type layer and the p-type layer and including:
• a plurality of barrier layers including a nitride semiconductor, and a plurality of well layers, each of the well layers being provided between the barrier layers, having a bandgap energy smaller than a bandgap energy of the barrier layers and including a nitride semiconductor, the method comprising:
• forming one of the barrier layer on the n-type layer using gas including group III raw material gas and group V raw material gas by forming a first portion layer serving as a portion of the one of the barrier layer and forming a second portion layer on the first portion layer, the second portion layer serving as another portion of the one of the barrier layer and containing an n-type impurity with a concentration higher than an n-type impurity concentration in the first portion layer;
• and
• forming one of the well layer on the one of the barrier layers using gas including group III raw material gas and group V raw material gas by forming a third portion layer serving as a portion of the one of the well layer and forming a fourth portion layer on the third portion layer, the fourth portion layer serving as another portion of the one of the well layer and containing the n-type impurity with a concentration higher than an n-type impurity concentration in the third portion layer.