Semiconductor light emitting device and method for manufacturing the same

A method for manufacturing a semiconductor light emitting device, comprising:

• forming a metal layer on a second semiconductor layer of a structural body, the structural body including a first semiconductor layer of a first conductivity type, the second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer;
• forming a resist film on the metal layer;
• forming a resist layer including a plurality of first resist apertures and at least one second resist aperture by irradiating the resist film with electron beam or light and performing development of the resist film;
• and
• forming an electrode layer including a plurality of first opening portions and at least one second opening portion by etching the metal layer using the resist layer as a mask, the plurality of first opening portions corresponding to the plurality of first resist opening portions and each having a circle equivalent diameter of not less than 10 nanometers and not more than 1 micrometer, the at least one second opening portion corresponding to the at least one second resist aperture and having a circle equivalent diameter of more than 1 micrometer and not more than 30 micrometers.

A method for manufacturing a semiconductor light emitting device, comprising:

• forming a metal layer on a second semiconductor layer of a structural body, the structural body including a first semiconductor layer of a first conductivity type, the second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer;
• forming a resist film on the metal layer;
• forming a resist layer including a plurality of first resist recesses and at least one second resist recess in the resist film by pressing a projection of a stamper including the projection against the resist film;
• and
• forming an electrode layer including a plurality of first opening portions and at least one second opening portion by etching the metal layer using the resist layer as a mask, the plurality of first opening portions corresponding to a plurality of first resist apertures and each having a circle equivalent diameter of not less than 10 nanometers and not more than 1 micrometer, the at least one second opening portion corresponding to the at least one second resist aperture and having a circle equivalent diameter of more than 1 micrometer and not more than 30 micrometers.