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US 2012/0056153 A1Published application
Semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsShinji SAITO, Maki Sugai, Eiji Muramoto, Shinya Nunoue
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Abstract
A semiconductor device of an embodiment includes: a semiconductor layer made of p-type nitride semiconductor; an oxide layer formed on the semiconductor layer, the oxide layer being made of a polycrystalline nickel oxide, and the oxide layer having a thickness of 3 nm or less; and a metal layer formed on the oxide layer.
Claims15
A semiconductor device comprising:
- a semiconductor layer made of p-type nitride semiconductor;
- an oxide layer formed on the semiconductor layer, the oxide layer being made of a polycrystalline nickel oxide, and the oxide layer having a thickness of 3 nm or less;
- and
- a metal layer formed on the oxide layer.
1 more element
A semiconductor device comprising:
- a substrate transmitting light;
- a n-type semiconductor layer formed on the substrate, the n-type semiconductor layer being made of n-type nitride semiconductor;
- an active layer formed on the n-type semiconductor layer, the active layer emitting light;
- a p-type semiconductor layer formed on the active layer, the p-type semiconductor layer being made of p-type nitride semiconductor;
- an n-side electrode formed on the n-type semiconductor layer, the n-side electrode being formed in a region in which the active layer is not formed;
- and
- a p-side electrode formed on the p-type semiconductor layer, the p-side electrode including a polycrystalline nickel oxide layer having a thickness of 3 nm or less and a metal layer formed on the nickel oxide layer, the p-side electrode reflecting light emitted from the active layer to a substrate side.
4 more elements
A semiconductor device comprising:
- a substrate made of semiconductor;
- an n-type semiconductor layer formed on one face of the substrate, the n-type semiconductor layer being made of n-type nitride semiconductor;
- an active layer formed on the n-type semiconductor layer, the active layer emitting light;
- a p-type semiconductor layer formed on the active layer, the p-type semiconductor layer being made of p-type nitride semiconductor, the p-type semiconductor having a ridge stripe;
- an n-side electrode formed on the other face of the substrate;
- and
- a p-side electrode formed on the ridge stripe, the p-side electrode including a polycrystalline nickel oxide layer having a thickness of 3 nm or less and a metal layer formed on the nickel oxide layer.
4 more elements
Dependencies are inferred from the claim text.