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US 2012/0056152 A1Published application
Light emitting devices
AssigneeChi Mei Lighting Technology Corp.
InventorsMeng Hsin Li, Kuo Hui Yu, Tsung-Hung Lu, Ming-Ji Tsai, Chang Hsin Chu
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Abstract
In one aspect of the invention, a light emitting device includes an epi layer having multiple layers of semiconductors formed on a substrate, a first electrode and a second electrode having opposite polarities with each other, and electrically coupled to corresponding semiconductor layers, respectively, of the epi layer, and a rod structure formed on the epi layer. The rod structure includes a plurality of rods distanced from each other.
Claims20
A light emitting device, comprising:
- a substrate;
- a buffer layer formed on the substrate;
- a first-type semiconductor layer formed on the buffer layer;
- an active layer formed on the first-type semiconductor layer such that the first-type semiconductor layer has an exposed area;
- a second-type semiconductor layer formed on the active layer;
- a contact layer formed on the second-type semiconductor layer;
- a rod structure formed on at least one of the contact layer and the exposed area of the first-type semiconductor layer;
- a second-type electrode formed on the contact layer;
- and
- a first-type electrode formed on the exposed area of the first-type semiconductor layer.
7 more elements
A light emitting device, comprising:
- a substrate having a first surface and an opposite, second surface;
- a buffer layer formed on the second surface of the substrate;
- a distributed Bragg reflector (DBR) layer formed on the buffer layer;
- a first-type semiconductor layer formed on the DBR layer;
- an active layer formed on the first-type semiconductor layer;
- a second-type semiconductor layer formed on the active layer;
- a light extraction layer formed on the second-type semiconductor layer;
- a contact layer formed on the light extraction layer;
- a rod structure formed on a portion of the contact layer;
- a first-type electrode formed on the first surface of the substrate;
- and
- a second-type electrode formed on the contact layer.
9 more elements
A light emitting device, comprising:
- an epi layer having multiple layers of semiconductors formed on a substrate;
- a first electrode and a second electrode having opposite polarities with each other, and electrically coupled to corresponding semiconductor layers, respectively, of the epi layer;
- and
- a rod structure formed on the epi layer.
1 more element
Dependencies are inferred from the claim text.