Nitride semiconductor light-emitting device with electrode pattern

A nitride semiconductor light-emitting device comprising:

• an active layer having a multi-quantum-well structure between an n-type nitride layer and a p-type nitride layer;
• a p-electrode pattern comprising one or more p-pads disposed on the p-type nitride layer, and a plurality of p-fingers extending from the p-pads;
• and
• an n-electrode pattern comprising one or more n-pads disposed on an exposed region of the n-type nitride layer, and a plurality of n-fingers extending from the n-pads,
• wherein the n-fingers have identical resistances, and the p-fingers have identical resistances to improve current spreading to the active layer,
• wherein each of the p-fingers satisfies a relationship, R=ρL/A, where R, ρ, L and A are resistance in ohms, resistivity in ohm-cm, length in cm, and a cross-sectional area in cm2 of the p-finger, respectively, so that the cross-sectional area A is proportional to the length L, and
• wherein the p-fingers or the n-fingers comprise a plurality of fingers extending alternately and radially.