Nonvolatile memory device and method for manufacturing same
AssigneeKabushiki Kaisha Toshiba
InventorsKenji AOYAMA, Kazuhiko Yamamoto, Satoshi Ishikawa, Shigeto Oshino
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Abstract
According to one embodiment, a nonvolatile memory device includes a selection element layer and a nanomaterial aggregate layer. The selection element layer includes silicon. The nanomaterial aggregate layer is stacked on the selection element layer. The nanomaterial aggregate layer includes a plurality of micro conductive bodies and fine particles dispersed in a plurality of gaps between the micro conductive bodies. At least a surface of the fine particle is made of an insulating material other than silicon oxide.
Claims16
A nonvolatile memory device, comprising:
- a selection element layer including silicon;
- and
- a nanomaterial aggregate layer stacked on the selection element layer, the nanomaterial aggregate layer including a plurality of micro conductive bodies and fine particles dispersed in a plurality of gaps between the micro conductive bodies, at least a surface of the fine particle being made of an insulating material other than silicon oxide.
A method for manufacturing a nonvolatile memory device, comprising:
- forming a stacked body including a nanomaterial aggregate layer stacked with a selection element layer including silicon, the nanomaterial aggregate layer including a plurality of micro conductive bodies and fine particles dispersed in a plurality of gaps between the micro conductive bodies, at least a surface of the fine particle being made of an insulating material other than silicon oxide;
- forming a pillar by selectively removing the stacked body;
- and
- removing a by-product adhered to a side face of the pillar by using a chemical liquid providing a higher dissolution rate of the by-product than of the insulating material.
Dependencies are inferred from the claim text.