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AssigneeGtat IP Holding LLC
InventorsJohn P. DeLuca, Frank S. Delk, II, Bayard K. Johnson, William L. Luter, Neil D. Middendorf, Dick S. Williams, Nels Patrick Ostrom, James N. Highfill
Estimating the term…
A doped silicon single crystal having a resistivity variation along a longitudinal and/or radial axis of less than 10% and a method of preparing one or a sequential series of doped silicon crystals is disclosed. The method includes providing a melt material comprising silicon into a continuous Czochralski crystal growth apparatus, delivering a dopant, such as gallium, indium, or aluminum, to the melt material, providing a seed crystal into the melt material when the melt material is in molten form, and growing a doped silicon single crystal by withdrawing the seed crystal from the melt material. Additional melt material is provided to the apparatus during the growing step. A doping model for calculating the amount of dopant to be delivered into the melt material during one or more doping events, methods for delivering the dopant, and vessels and containers used to deliver the dopant are also disclosed.
A method of preparing at least one doped silicon single crystal comprising the steps of:
A doped silicon single crystal having a resistivity variation along a longitudinal axis of less than 5%.
A doped silicon single crystal having a resistivity variation along a radial axis of less than 5%.
A silicon container filled with a dopant comprising:
A silicon vessel for adding dopant to an inner growth chamber of a crystal growing apparatus, said vessel comprising a silicon cup formed on the end of a seed crystal from the melt material in the inner growth chamber.
A silicon vessel for adding dopant to the inner growth chamber of a crystal growing apparatus, said vessel is configured to be mounted to a seed crystal of a crystal growing apparatus via a friction fit.
Dependencies are inferred from the claim text.