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US 2012/0056110 A1Published application
Using beam blockers to perform a patterned implant of a workpiece
AssigneeVarian Semiconductor Equipment Associated, Inc.
InventorsDaniel DISTASO, Russell J. Low
Life of this patent
Estimating the term…
Abstract
Blockers in an ion beam blocker unit selectively block or trim an ion beam. In one instance, the ion beam has first current regions and second current regions. These current regions may be unequal. The ion beam is then implanted into a workpiece to form regions with different doses. The workpiece may be scanned so that the entirety of its surface is implanted.
Claims20
A method of ion implantation comprising:
- generating an ion beam having a long dimension;
- blocking a portion of said ion beam at a plurality of locations across said long dimension;
- and
- simultaneously implanting said ion beam into a workpiece at a first dose and a second dose after said blocking, wherein said first dose corresponds to said plurality of locations and said second dose is higher than said first dose.
1 more element
A method of ion implantation comprising:
- generating an ion beam having a long dimension;
- blocking a portion of said ion beam at a plurality of locations across said long dimension;
- and
- simultaneously implanting said ion beam into a workpiece after said blocking to form a first plurality of regions having a first dose and a second plurality of regions having a second dose that is greater than said first dose, said first plurality of regions corresponding to the plurality of said locations of said blocking.
1 more element
A method of ion implantation comprising:
- generating an ion beam having a long dimension;
- blocking a portion of said ion beam at a plurality of locations across said long dimension, wherein the amount of said blocking is individually controlled for said plurality of locations;
- scanning a workpiece with respect to said ion beam;
- and
- performing a patterned implant of said workpiece, wherein a first dose is implanted at a plurality of regions corresponding to said plurality of locations of said blocking, and wherein a second dose higher than said first dose is implanted into a remainder of said workpiece.
2 more elements
A method of ion implantation comprising:
- generating an ion beam having a long dimension;
- blocking a portion of said ion beam at a plurality of locations across said long dimension to form a patterned ion beam having first current regions and second current regions across said long dimension, said first current regions having a lower current than said second current regions and corresponding to said plurality of locations, and wherein both said first current regions and said second current regions have a current greater than zero;
- scanning a workpiece with respect to said patterned ion beam;
- and
- implanting said workpiece with said patterned ion beam such that said workpiece is simultaneously implanted with said first current regions and said second current regions.
2 more elements
Dependencies are inferred from the claim text.