Heat treatment apparatus
AssigneeHitachi High-Technologies Corporation
InventorsKen'etsu Yokogawa, Masatoshi Miyake
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AssigneeHitachi High-Technologies Corporation
InventorsKen'etsu Yokogawa, Masatoshi Miyake
Estimating the term…
Provided is a heat treatment apparatus that even when annealing SiC at high temperature, can exhibit a low heat capacity and perform uniform heating. The heat treatment apparatus includes a pair of parallel plate electrodes, high-frequency power supply that applies a high-frequency voltage to the pair of parallel plate electrodes so as to discharge between the pair of parallel plate electrodes, a temperature measurement instrument that measures the temperature of a sample to be heated which is disposed in the pair of parallel plate electrodes, a gas introduction unit that introduces a gas to the pair of parallel plate electrodes, reflection mirrors that surround the pair of parallel plate electrodes, and a control unit that controls the output of the high-frequency power supply. Heating of a gas due to discharge between the pair of parallel plate electrodes is used to thermally treat the sample to be heated.
A heat treatment apparatus comprising:
A heat treatment apparatus comprising:
A heat treatment apparatus comprising:
The heat treatment apparatus according to claim further comprising a control unit that controls a type of gas to be introduced by the gas introduction unit, a gas flow rate, and the output of the high-frequency power supply, wherein:
Dependencies are inferred from the claim text.