High-efficiency solar cell structures and methods of manufacture
AssigneeTetrasun, Inc.
InventorsOliver Schultz-Wittmann, Denis DeCeuster
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Abstract
Solar cells of varying composition are disclosed, generally including a central substrate, conductive layer(s), antireflection layers(s), passivation layer(s) and/or electrode(s). Multifunctional layers provide combined functions of passivation, transparency, sufficient conductivity for vertical carrier flow, the junction, and/or varying degrees of anti-reflectivity. Improved manufacturing methods including single-side CVD deposition processes and thermal treatment for layer formation and/or conversion are also disclosed.
Claims17
A method of fabricating a solar cell, comprising:
- providing a wafer as a central substrate;
- depositing or growing at least one interface passivation layer over the substrate;
- depositing at least one conductive layer over the passivation layer(s);
- providing thermal treatment;
- and
- providing metallization as electrodes.
A method of forming a solar cell, comprising applying a heat treatment to produce a multifunctional film which separates into a surface passivating interface layer and a highly doped polycrystalline passivation layer with high transparency.
A method of forming a solar cell, comprising depositing an amorphous, silicon containing compound and using a thermal treatment greater than 500° C. to activate doping atoms in the compound and result in diffusion of dopant atoms into a substrate to provide a high-low junction or a p-n junction.
A solar cell, comprising:
- a wafer as a central substrate;
- at least one interface passivation layer over the substrate formed using thermal treatment;
- at least one conductive layer over the passivation layer(s);
- and
- metallization as electrodes.
A solar cell, comprising a multifunctional film thermally treated to separate into a surface passivating interface layer and a highly doped polycrystalline passivation layer with high transparency.
A solar cell, comprising an amorphous, silicon containing compound treated using a thermal treatment greater than 500° C. to activate doping atoms in the compound thereby resulting in diffusion of dopant atoms into a substrate to provide a high-low junction or a p-n junction.
Dependencies are inferred from the claim text.