Semiconductor optoelectronic device

A semiconductor optoelectronic device, comprising:

• a non-conductive growth substrate;
• a first semiconductor optoelectronic device formed on the non-conductive growth substrate, comprising:
• a first semiconductor epitaxial stack unit formed on the non-conductive growth substrate, comprising:
• a sacrificial layer with electrical conductivity formed on the non-conductive growth substrate;
• a first semiconductor material layer having a first electrical conductivity formed on the sacrificial layer;
• and
• a second semiconductor material layer having a second electrical conductivity formed on the first semiconductor material layer;
• a second semiconductor optoelectronic device formed on the non-conductive growth substrate, comprising:
• a third semiconductor material layer having a second electrical conductivity formed on the non-conductive growth substrate;
• a fourth semiconductor material layer having a first electrical conductivity formed on the second semiconductor material layer;
• a conductive connection structure formed on the non-conductive growth substrate and electrically connecting the first semiconductor material layer of the first semiconductor optoelectronic device and the third semiconductor material layer of the second semiconductor optoelectronic device;
• a first electrode formed on the non-conductive growth substrate and electrically connected to the first semiconductor optoelectronic device;
• and
• a second electrode formed on the non-conductive growth substrate and electrically connected to the second semiconductor optoelectronic device.