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US 2012/0055401 A1Published application
Substrate processing method and system
AssigneeTokyo Electron Limited
InventorShigeki TOZAWA
Life of this patent
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Abstract
A substrate processing method includes a first step of subjecting a target substrate to a gas process within an atmosphere containing a fluorine-containing process gas, thereby forming a fluorine-containing reaction product on a surface of the target substrate. The method further includes a second step of subjecting the target substrate treated by the gas process to a heating process and a gas process within an atmosphere containing a reactive gas that reacts with fluorine.
Claims21
1-22. (canceled)
A substrate processing system comprising:
- a first gas supply section configured to supply a fluorine-containing gas to a process object;
- a second gas supply section configured to supply a reactive gas that reacts with fluorine to the process object;
- and
- a control section configured to control operation of the system,
- wherein the control section includes a computer readable non-transitory storage medium that stores a control program for execution on a computer, the control program, when executed, causing the control section to control the system to conduct a process sequence for processing a target substrate as the process object, the process sequence including:
- performing a first gas process of processing the target substrate within an atmosphere containing the fluorine-containing gas supplied from the first gas supply section to form a reaction product containing fluorine on a surface of the target substrate;
- and
- performing a second gas process of processing the target substrate within an atmosphere containing the reactive gas supplied from the second gas supply section.
5 more elements
Dependencies are inferred from the claim text.