Nano structured field effect sensor and methods of forming and using same
OwnerBharath R Takulapalliinventor
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Abstract
A solid-state field-effect transistor sensor for detecting chemical and biological species and for detecting changes in radiation is disclosed. The device includes a porous or structured channel section to improve device sensitivity. The device is operated in a fully depleted mode such that a sensed biological, chemical or radiation change causes an exponential change in channel conductance.
Claims25
A sensor for detecting a biological, chemical, or radioactive species, the sensor comprising:
- a substrate;
- an insulator formed overlying a portion of the substrate;
- and
- a channel found overlying the insulator, wherein the channel surface is nano-structured or includes pores, and
- wherein the sensor is configured to operate in a fully depleted mode, such that a sensed biological, chemical, or radioactive species causes an exponential change in channel conductance of the field effect sensor.
The sensor for detecting a biological, chemical, or radioactive species wherein the substrate, the insulator and the channel are formed from a silicon-on-insulator substrate.
A method of operating a sensor, the method comprising the steps of providing a sensor comprising:
- a substrate;
- an insulator formed overlying a portion of the substrate;
- and
- a nano-structured or porous channel found overlying the insulator,
- exposing the sensor to an atmosphere suspected of containing chemical, biological, or radioactive species;
- and
- measuring an exponential change in drain current upon detection of the chemical biological, or radioactive species.
A method of forming a solid-state sensor, the method comprising the steps of:
- providing a substrate;
- forming an insulator overlying the substrate;
- and
- forming a porous channel region overlying the insulator.
A sensor for detecting a biological, chemical, or radioactive species, the sensor comprising:
- an insulator;
- and
- a channel found overlying the insulator, wherein the channel surface is nano-structured or includes pores, and
- wherein the sensor is configured to operate in a fully depleted mode, such that a sensed biological, chemical, or radioactive species causes an exponential change in channel conductance of the field effect sensor and wherein the channel is fully depleted without any need for gate bias.
Dependencies are inferred from the claim text.