Deposition system with a rotating drum
AssigneeVaeco Inc.
InventorRichard DeVito
Life of this patent
Estimating the term…
Abstract
A deposition method comprises flowing a first gas into a metallization zone maintained at a first pressure. A second gas flows into a reaction zone maintained at a second pressure. The second pressure is less than the first pressure. A rotating drum includes at least one substrate mounted to a surface of the drum. The surface alternately passes through the metallization zone and passes through the reaction zone. A target is sputtered in the metallization zone to create a film on the at least one substrate. The film on the at least one substrate is reacted in the reaction zone.
Claims20
A method for deposition comprising:
- flowing a first gas into a metallization zone maintained at a first pressure;
- flowing a second gas into a reaction zone maintained at a second pressure, the second pressure being less than the first pressure;
- rotating a drum including at least one substrate mounted to a surface of the drum, the surface alternately passing through the metallization zone and passing through the reaction zone;
- sputtering a target in the metallization zone to create a film on the at least one substrate;
- and
- reacting the film on the at least one substrate in the reaction zone.
A deposition system comprising:
- a metallization zone including a sputtering system for depositing a film on the at least one substrate sputtered from a target and pressurized with a first gas at a first pressure;
- a reaction zone including an ionization source and pressurized with a second gas at a second pressure, the second pressure being less than the first pressure;
- and
- a drum configured to hold at least one substrate mounted to a surface of the drum, upon rotation of the drum the surface alternately passing through the metallization zone and passing through the reaction zone, the metallization zone proximate to a first location of the drum, the reaction zone proximate to a second location of the drum, and the distance along a circumference of the drum from the first location to the second location exceeding a mean free path of the second gas.
A deposition system comprising:
- a metallization zone including a sputtering system for depositing a film on the at least one substrate sputtered from a target and pressurized with a first gas at a first pressure;
- a reaction zone including an ionization source and pressurized with a second gas at a second pressure, the second pressure being less than the first pressure, the reaction zone interposed between a pair of inner baffles and including a reaction zone pump, the inner baffles interposed between a pair of differential pumps, the differential pumps interposed between a pair of outer baffles, the reaction zone pump configured to pump the reaction zone to the second pressure and the pair of differential pumps configured to assist a main chamber pump to pump the metallization zone to the first pressure, the main chamber pump in communication with the metallization zone and the reaction zone;
- and
- a drum configured to hold at least one substrate mounted to a surface of the drum, upon rotation of the drum the surface alternately passing through the metallization zone and passing through the reaction zone, the metallization zone proximate to a first location of the drum, the reaction zone proximate to a second location of the drum, and the distance along the circumference of the drum from the first location to the second location exceeding a mean free path of the second gas.
Dependencies are inferred from the claim text.