Low zirconium, hafnium-containing compositions, processes for the preparation thereof and methods of use thereof
OwnerScott Houston Meiere, James Philip Natwora, JR.inventors
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OwnerScott Houston Meiere, James Philip Natwora, JR.inventors
Estimating the term…
This invention relates to hafnium-containing compositions having a zirconium concentration of less than about 500 parts per million, a process for producing the hafnium-containing compositions, organometallic precursor compositions containing a hafnium-containing compound and having a zirconium concentration of less than about 500 parts per million, a process for producing the organometallic precursor compositions, and a method for producing a film or coating from the organometallic precursor compositions. The organometallic precursor compositions are useful in semiconductor applications as chemical vapor deposition (CVD) or atomic layer deposition (ALD) precursors for film depositions.
A process for producing a composition comprising a hafnium-containing compound represented by the formula Hf(R)m wherein R is the same or different and represents a halogen atom, a pseudohalogen group, an acyl group having from 1 to about 12 carbon atoms, an alkoxy group having from 1 to about 12 carbon atoms, an alkoxycarbonyl group having from 1 to about 12 carbon atoms, an alkyl group having from 1 to about 12 carbon atoms, an amino group having from 1 to about 12 carbon atoms, an imino group having from 1 to about 12 carbon atoms, a silyl group having from 0 to about 12 carbon atoms, an allyl-like group having from 1 to about 12 carbon atoms, a beta-diketonato group having from 1 to about 12 carbon atoms, or an amidinato group having from 1 to about 12 carbon atoms, m is a value of from 1 to 4, and wherein said composition has a zirconium concentration of less than about 500 parts per million, which process comprises reacting a hydrocarbon or heteroatom-containing compound with a hafnium halide compound represented by the formula Hf(X)4 wherein X is the same or different and is a halide and wherein said hafnium halide compound has a zirconium concentration of less than about 500 parts per million, under reaction conditions sufficient to produce said composition;
A process for producing a composition comprising a hafnium-containing compound represented by the formula Hf(R)m wherein R is the same or different and represents a halogen atom, a pseudohalogen group, an acyl group having from 1 to about 12 carbon atoms, an alkoxy group having from 1 to about 12 carbon atoms, an alkoxycarbonyl group having from 1 to about 12 carbon atoms, an alkyl group having from 1 to about 12 carbon atoms, an amino group having from 1 to about 12 carbon atoms, an imino group having from 1 to about 12 carbon atoms, a silyl group having from 0 to about 12 carbon atoms, an allyl-like group having from 1 to about 12 carbon atoms, a beta-diketonato group having from 1 to about 12 carbon atoms, or an amidinato group having from 1 to about 12 carbon atoms, m is a value of from 1 to 4, and wherein said composition has a zirconium concentration of less than about 500 parts per million, which process comprises reacting a hydrocarbon or heteroatom-containing compound with a hafnium halide compound represented by the formula Hf(X)4 wherein X is the same or different and is a halide and wherein said hafnium halide compound has a zirconium concentration of less than about 500 parts per million, under reaction conditions sufficient to produce said composition;
Dependencies are inferred from the claim text.