Electron-emitting device and image display apparatus using the same, as well as manufacturing method therefor

A method of manufacturing an electron-emitting device comprising steps of:

• etching a stacked layer structure formed by successively stacking, on a substrate, a first insulating material, a second insulating material and a first electroconductive material, to form a step-shape forming member having upper and side planes and having at the upper plane a layer of the first electroconductive material;
• further etching a layer of the second insulating material to form a concave portion at the side plane of the step-shape forming member just under the layer of the first electroconductive material;
• and
• thereafter, bonding a second electroconductive material to form a cathode placed on the side plane of on the step-shape forming member and having an upper edge at which a protruding portion is formed to protrude in a direction from a lower edge toward the upper edge, and to form a gate including the layer of the first electroconductive material alone or including the layer of the first electroconductive material and the layer of the second electroconductive material stacked on the layer of the first electroconductive material, wherein
• the method further comprises step of:
• forming, at a plurality times, the layer of the first insulating material, and wherein
• during the step of etching the stacked layer structure, an etching rate is set such that an etching rate of the lower portion of the layer of the first insulation material is smaller than an etching rate of the upper portion of the layer of the first insulation material, such that an inclination angle of an upper portion of the side plane of the step-shape forming member formed from a lower edge of the concave portion to a middle portion in height direction of the step-shape forming member is not larger than an inclination angle of a lower portion of the side plane of the step-shape forming member formed from the middle portion to a lower end portion of the step-shape forming member, and
• the second electroconductive material is supplied from a direction perpendicular to a surface of the substrate to be deposited thereon.

A method of manufacturing an electron-emitting device comprising steps of:

• etching a stacked layer structure formed by successively stacking, on a substrate, a first insulating material, a second insulating material and a first electroconductive material, to form a step-shape forming member having upper and side planes and having at the upper plane a layer of the first electroconductive material;
• further etching a layer of the second insulating material to form a concave portion at the side plane of the step-shape forming member just under the layer of the first electroconductive material;
• and
• thereafter, bonding a second electroconductive material to form a cathode placed on the side plane of on the step-shape forming member and having an upper edge at which a protruding portion is formed to protrude in a direction from a lower edge toward the upper edge, and to form a gate including the layer of the first electroconductive material alone or including the layer of the first electroconductive material and the layer of the second electroconductive material stacked on the layer of the first electroconductive material, wherein
• the step of etching the stacked layer structure is performed in a plurality of times in a different conditions, such that an inclination angle of an upper portion of the side plane of the step-shape forming member formed from a lower edge of the concave portion to a middle portion in height direction of the step-shape forming member is not larger than an inclination angle of a lower portion of the side plane of the step-shape forming member formed from the middle portion to a lower end portion of the step-shape forming member, and
• the second electroconductive material is supplied from a direction perpendicular to a surface of the substrate to be deposited thereon.