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US 2011/0300708 A1Published application
Through-silicon via structure and method for making the same
AssigneeUnited Microelectronics Corp.
InventorChien-Li Kuo
Life of this patent
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Abstract
A through-silicon via structure includes a substrate with a first side and a second side, a through-silicon hole connecting the first side and the second side and filled with a conductive material, a passivation layer disposed on and contacting the first side and covering the through-silicon hole, and a protection ring surrounding but not contacting the through-silicon hole and exposed by the first side and the second side. The protection ring is filled with an insulating material.
Claims11
A method for forming a through-silicon via (TSV) structure, comprising:
- providing a substrate with a first side and a second side opposite to said first side;
- performing an etching procedure to form a through-silicon hole and a protection trench, so that said protection trench surrounds said through-silicon hole, wherein said through-silicon hole is deeper than said protection ring;
- filling said protection trench and said through-silicon hole with an insulating material;
- forming a passivation layer comprising a first conductive material and disposed on said first side and covering said through-silicon hole;
- thinning said substrate from said second side to expose said insulating material in said through-silicon hole;
- and
- replacing said insulating material in said through-silicon hole with a second conductive material to form said through-silicon via structure.
4 more elements
Dependencies are inferred from the claim text.