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US 2011/0300707 A1Published application
Metallization and Its Use In, In Particular, an IGBT or a Diode
AssigneeInfineon Technologies AG
InventorsFrank Hille, Hans-Joachim Schulze
Life of this patent
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Abstract
A method of fabricating a power semiconductor component having a semiconductor body having at least two main surfaces includes applying a layer of a metallization on at least one of the main surfaces. The layer has a thickness of at least 15 μm and serves as a heat sink. The method also includes producing a field stop zone in the semiconductor body by implantation of protons or helium through the layer.
Claims19
A method for fabricating a power semiconductor component having a semiconductor body having at least two main surfaces, the method comprising:
- a) applying a layer of a metallization on at least one of the main surfaces, the layer having a thickness of at least 15 μm, the layer serving as a heat sink;
- and
- b) producing a field stop zone in the semiconductor body by implantation of protons or helium through the layer.
Dependencies are inferred from the claim text.