Method for fabricating semiconductor device
AssigneePanasonic Corporation
InventorShunsuke ISONO
Life of this patent
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Abstract
An insulating film is formed on a semiconductor substrate. A metal sacrificial film is formed on the insulating film. Then, the sacrificial film is selectively etched to form a trench pattern in the sacrificial film. The insulating film is irradiated with ultraviolet light or an electron beam using the sacrificial film having the trench pattern as a mask. After that, an interconnect formation groove is formed in the insulating film using the sacrificial film having the trench pattern as a mask. A metal film is formed in the interconnect formation groove.
Claims9
A method for fabricating a semiconductor device, comprising:
- forming an insulating film on a semiconductor substrate;
- forming a metal sacrificial film on the insulating film;
- selectively etching the sacrificial film to form an opening pattern in the sacrificial film;
- irradiating the insulating film with ultraviolet light or an electron beam using the sacrificial film having the opening pattern as a mask;
- after the irradiating, forming a hole or a groove in the insulating film using the sacrificial film having the opening pattern as a mask;
- and
- forming a conductive film in the hole or the groove.
A method for fabricating a semiconductor device, comprising:
- forming a first insulating film on a semiconductor substrate;
- forming an interconnect in an upper portion of the first insulating film;
- forming a second insulating film on the first insulating film including the interconnect;
- forming a metal sacrificial film on the second insulating film;
- selectively etching the sacrificial film to form an opening pattern in the sacrificial film;
- irradiating the second insulating film with ultraviolet light or an electron beam using the sacrificial film having the opening pattern as a mask;
- after the irradiating, forming a hole or a groove in the second insulating film using the sacrificial film having the opening pattern as a mask;
- and
- forming a conductive film in the hole or the groove.
Dependencies are inferred from the claim text.