Semiconductor device having a high aspect ratio isolation trench and method for manufacturing the same
AssigneeHynix Semiconductor Inc.
InventorTai Ho KIM
Life of this patent
Estimating the term…
Abstract
A semiconductor device having high aspect ratio isolation trenches and a method for manufacturing the same is presented. The semiconductor device includes a semiconductor substrate, a first insulation layer, and a second insulation layer. The semiconductor substrate has a second trench that is wider than a first trench. The first insulation layer is partially formed within the wider second trench in which the first insulation layer when formed clogs the opening of the narrower first trench. A cleaning of the first insulation layer unclogs the opening of the narrower first trench in which a second insulation layer can then be formed within both the first and second trenches.
Claims10
A method for manufacturing a semiconductor device, comprising the steps of:
- defining a first trench and a second trench in a semiconductor substrate such that the second trench is wider than the first trench;
- forming a first insulation layer over the semiconductor substrate and over the first and second trenches so that an entrance of the first trench is clogged by the first insulation layer and so that the first insulation layer is deposited within the second trench;
- cleaning the first insulation layer to open up the clogged entrance of the first trench;
- and
- forming a second insulation layer to substantially fill in the second trench which already has the first insulation layer is partially filled and forming the second insulation layer to substantially fill in the first trench.
Dependencies are inferred from the claim text.