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US 2011/0300697 A1Published application
Method of fabricating semiconductor device
AssigneeSharp Kabushiki Kaisha
InventorsMasatsugu Kohira, Yasushi Funakoshi
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Abstract
Disclosed is a method of fabricating a semiconductor device, including the steps of forming a diffusion preventing mask on a surface of a semiconductor substrate, applying a dopant diffusing agent containing a dopant of a first conductivity type or a second conductivity type onto the surface of the semiconductor substrate at a spacing from the diffusion preventing mask, and forming a dopant diffusion layer by diffusing the dopant from the dopant diffusing agent into the semiconductor substrate.
Claims4
A method of fabricating a semiconductor device, including the steps of:
- forming a diffusion preventing mask on a surface of a semiconductor substrate;
- applying a dopant diffusing agent containing a dopant of one of a first conductivity type and a second conductivity type onto said surface of said semiconductor substrate at a spacing from said diffusion preventing mask;
- and
- forming a dopant diffusion layer by diffusing said dopant from said dopant diffusing agent into said semiconductor substrate.
1 more element
Dependencies are inferred from the claim text.