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US 2011/0300696 A1Published application
Method for damage-free junction formation
AssigneeVarian Semiconductor Equipment Associates, Inc.
InventorsChristopher R. HATEM, Ludovic GODET
Life of this patent
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Abstract
Embodiments of this doping method may be used to improve junction formation. An implant species, such as helium or another noble gas, is implanted into a workpiece to a first depth. A dopant is deposited on a surface of the workpiece. During an anneal, the dopant diffuses to the first depth. The noble gas ions may at least partially amorphize the workpiece during the implant. The workpiece may be planar or non-planar. The implant and deposition may occur in a system without breaking vacuum.
Claims20
A doping method comprising:
- implanting a noble gas into a workpiece to a first depth;
- depositing a dopant on a surface of said workpiece;
- and
- annealing said workpiece wherein said dopant diffuses to said first depth.
1 more element
A doping method comprising:
- implanting a noble gas to a first depth into a plurality of non-planar surfaces of a workpiece;
- depositing a dopant on said plurality of non-planar surfaces;
- and
- annealing said workpiece wherein said dopant diffuses to said first depth of said plurality of non-planar surfaces.
1 more element
A doping method comprising:
- placing a workpiece into a process chamber;
- forming a vacuum in said process chamber;
- forming a plasma of a noble gas in said process chamber;
- implanting noble gas ions into said workpiece to a first depth;
- filling said process chamber with a dopant species;
- depositing said dopant species on said workpiece;
- removing said workpiece from said process chamber and breaking said vacuum;
- and
- annealing said workpiece wherein said dopant species diffuses to said first depth of said workpiece.
6 more elements
Dependencies are inferred from the claim text.