Semiconductor Devices
AssigneeSamsung Electronics Co., Ltd.
InventorChang-woo Oh
Life of this patent
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Abstract
Provided is a semiconductor device. The semiconductor device includes a semiconductor substrate, a first isolation dielectric pattern on the semiconductor substrate, and an active pattern on the first isolation dielectric pattern. A semiconductor pattern is interposed between the semiconductor substrate and the first isolation dielectric pattern, and a second isolation dielectric pattern is interposed between the semiconductor substrate and the semiconductor pattern. The semiconductor substrate and the semiconductor pattern are electrically connected by a connection pattern.
Claims9
A method for manufacturing a semiconductor device, the method comprising:
- forming a stacked structure in which a sacrificial layer and an active layer are sequentially stacked on a semiconductor substrate;
- removing the sacrificial layer to form an empty space between the active layer and the semiconductor substrate;
- forming a second isolation dielectric pattern on the semiconductor substrate in the empty space;
- forming a semiconductor pattern on the semiconductor substrate, the semiconductor pattern is configured to fill the empty space and be separated from the semiconductor substrate;
- and
- forming a connection pattern that is configured to connect the semiconductor pattern and the semiconductor substrate.
Dependencies are inferred from the claim text.