Method for dividing a semiconductor film formed on a substrate into plural regions by multiple laser beam irradiation
AssigneeOerlikon Solar AG, Trubbach
InventorsJens Günster, Ivan Sinicco
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AssigneeOerlikon Solar AG, Trubbach
InventorsJens Günster, Ivan Sinicco
Estimating the term…
The present invention relates to a method for dividing a semiconductor film formed on a substrate into plural regions by multiple laser beam irradiation using a sequence of at least two laser beam treatments affecting essentially a same area of said film. Except of a final laser beam treatment, the treatments of said sequence of at least two laser beam treatments are used for a conditioning of the treated film area which is to be removed. Said final laser beam treatment is applied to actually remove material in order to form a groove. Further, the invention relates to an arrangement for dividing a semiconductor film formed on a substrate into plural regions by multiple laser beam irradiation using a sequence of at least two laser beam treatments affecting essentially a same area of said film. Said arrangement comprises a first conditioning laser for the treatments of said sequence of at least two laser beam treatments except of a final laser beam treatment and it comprises a second laser for said final laser beam treatment.
A method for dividing a semiconductor film formed on a substrate into plural regions by multiple laser beam irradiation using a sequence of at least two laser beam treatments affecting essentially a same area of said film, wherein except of a final laser beam treatment, the treatments of said sequence of at least two laser beam treatments are used for a conditioning of the treated film area which is to be removed and in that said final laser beam treatment is applied to actually remove material in order to form a groove, wherein a first conditioning laser which is mounted on a carriage is used to perform a conditioning step and a second laser which is mounted on said carriage and which is arranged spaced apart of said first conditioning laser in a line oriented along a movement direction of said carriage is used to perform a removal step and in that a bidirectional functionality of the laser arrangement is achieved by using a further conditioning laser installed on said carriage in said line with said first conditioning and said second laser.
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An arrangement for dividing a semiconductor film formed on a substrate into plural regions by multiple laser beam irradiation using a sequence of at least two laser beam treatments affecting essentially a same area of said film, comprising a first conditioning laser for the treatments of said sequence of at least two laser beam treatments except of a final laser beam treatment and comprising a second laser for said final laser beam treatment, wherein said arrangement comprises a carriage accommodating a plurality of lasers, comprising at least said first conditioning laser and, spaced apart but arranged in a line with a movement direction of the first conditioning laser, said second laser and in that said carriage can comprise a further conditioning laser arranged in said line with said first conditioning laser and said second laser in order to allow for a bidirectional functionality of said laser arrangement.
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Dependencies are inferred from the claim text.