Methods of Fabricating Non-Volatile Memory Devices

A method of forming a non-volatile memory device, comprising:

• selectively implanting first conductivity type dopants into a semiconductor layer to thereby define a first impurity region therein having N-type or P-type conductivity;
• selectively etching the first impurity region to define a sidewall thereon;
• forming a first word line or a first bit line of the non-volatile memory device on the sidewall of the first impurity region;
• and
• converting the semiconductor layer into a plurality of memory cells comprising respective portions of the first impurity region therein.

A method of fabricating a non-volatile memory device, the method comprising:

• forming a stack structure that comprises:
• a plurality of horizontal device layers disposed spaced apart from each other at different levels in a third direction that is perpendicular to a surface of a substrate, wherein each of the horizontal device layers comprises:
• a semiconductor layer comprising a first impurity region having a first conductivity type on one side of the semiconductor layer in a first direction parallel to the surface of the substrate;
• and
• a horizontal conductive layer that is disposed near the one side of the semiconductor layer and extends in a second direction that is parallel to the surface of the substrate and is perpendicular to the first direction;
• and
• an interlayer insulating layer interposed between neighboring horizontal device layers;
• forming a second impurity region on the other side of the semiconductor layer comprised in each of the horizontal device layers opposite to the one side of the semiconductor layer in a direction opposite to the first direction by implanting an impurity having a second conductivity type that is different from the first conductivity type;
• and
• forming a three-dimensional array of semiconductor diodes by dividing the semiconductor layer comprised in each of the horizontal device layers into pluralities in a direction from the one side of the semiconductor layer to the other side of the semiconductor layer and each of the semiconductor diodes comprises a portion of the first impurity region and a portion of the second impurity region.

A method of fabricating a non-volatile memory device, the method comprising:

• forming a stack structure that comprises:
• a plurality of horizontal device layers disposed spaced apart from each other at different levels in a third direction that is perpendicular to a surface of a substrate, wherein each of the horizontal device layers comprises:
• a semiconductor layer comprising a first impurity region having a first conductivity type on one side of the semiconductor layer in a first direction parallel to the surface of the substrate,
• a spacer layer covering an upper surface of the first impurity region,
• a cover insulating layer covering an upper surface of a portion of the semiconductor layer other than the first impurity region,
• a horizontal conductive layer that extends in a second direction that is parallel to the surface of the substrate and is perpendicular to the first direction, and
• a variable resistance material layer interposed between the first impurity region and the horizontal conductive layer;
• and
• an interlayer insulating layer interposed between neighboring horizontal device layers;
• forming a second impurity region on the other side of the semiconductor layer comprised in each of the horizontal device layers opposite to the one side of the semiconductor layer in a direction opposite to the first direction by implanting an impurity having a second conductivity type that is different from the first conductivity type;
• and
• forming a three-dimensional array of semiconductor diodes by dividing the semiconductor layer comprised in each of the horizontal device layers into pluralities in a direction from the one side of the semiconductor layer to the other side of the semiconductor layer and each of the semiconductor diodes comprises a portion of the first impurity region and a portion of the second impurity region.