Semiconductor device and method of forming the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJun-Beom Park, Soon-Moon Jung, Ki-Nam Kim
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Abstract
A semiconductor device and a method of forming the same are provided. The method includes preparing a semiconductor substrate. Insulating layers may be sequentially formed on the semiconductor substrate. Active elements may be formed between the insulating layers. A common node may be formed in the insulating layers to be electrically connected to the active elements. The common node and the active elements may be 2-dimensionally and repeatedly arranged on the semiconductor substrate.
Claims13
A method of forming a semiconductor device, comprising:
- preparing a semiconductor substrate defined by a cell array region and a peripheral circuit region;
- sequentially stacking first and second active elements on the semiconductor substrate in the cell array region;
- and
- forming a common node extending from an upper portion of the second active element toward the semiconductor substrate and electrically connected to the first and second active elements,
- wherein the first and second active elements are formed to protrude from a sidewall of the common node, and the common node is formed to have resistive memory elements corresponding to the first and second active elements, respectively.
A method of forming a semiconductor device, comprising:
- preparing a semiconductor substrate defined by a cell array region and a peripheral circuit region;
- sequentially stacking and forming first and second active elements insulated by a first insulating layer on the semiconductor substrate in the cell array region;
- forming a common node having a sidewall contacting to the first and the second active elements and penetrating the insulating layer,
- wherein the common node is formed to have resistive memory element at the contact region of first and second active elements, respectively.
Dependencies are inferred from the claim text.