Post-dispense vacuum oven for reducing underfill voids during ic assembly
AssigneeTexas Instruments Incorporated
InventorsEMORY TONGOL MERCADO, EDGARDO HORTALEZA, JOHN PAUL KWO
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AssigneeTexas Instruments Incorporated
InventorsEMORY TONGOL MERCADO, EDGARDO HORTALEZA, JOHN PAUL KWO
Estimating the term…
An IC assembly method for reducing voids in underfill material. An IC die is bonded to a substrate which creates a gap between the IC die and the substrate. An underfill material that has a curing temperature (Tuc) is dispensed around at least one side along a perimeter of the gap, where capillary forces draw the underfill material into the gap to at least partially fill the gap to form an underfilled IC assembly. After the dispensing, a vacuum oven process is applied to the underfilled IC assembly which applies a vacuum of 15 to 140 torr and a temperature that is between Tuc −85° C. and Tuc −5° C., for reducing voids in the underfill material. The underfill material is then cured by heating the underfilled IC assembly to a temperature ≧ Tuc.
An IC assembly method for reducing voids in underfill material, comprising:
An IC assembly method for reducing voids in underfill material, comprising:
Dependencies are inferred from the claim text.