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US 2011/0300654 A1Published application
Method of manufacturing semiconductor light emitting device
AssigneeSamsung Electronics Co., Ltd.
InventorsYoun-joon Sung, Su-hee Chae, Tae-hoon Jang, Kyu-sang Kim
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Abstract
Provided is a method of manufacturing semiconductor light emitting devices including: forming light emitting structures by sequentially depositing a first material layer, an active layer and a second material layer; forming the roughness pattern on a region of the bottom of a substrate except at least a cleaving region for forming cleaving planes; and forming n-electrodes.
Claims3
A method of manufacturing semiconductor light emitting devices comprising:
- forming a plurality of light emitting structures by sequentially depositing a first material layer, an active layer and a second material layer and forming a plurality of ridges in the second material layer;
- forming a first p-electrode on each of the plurality of ridges;
- and
- forming second p-electrodes on the region of the plurality of light emitting structures except the cleaving region for forming cleaving planes.
1 more element
Dependencies are inferred from the claim text.