Substrate processing method and method for manufacturing liquid ejection head
AssigneeCanon Kabushiki Kaisha
InventorSeiko Minami
Life of this patent
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Abstract
A substrate processing method including the steps of disposing a substrate having a recess in such a manner that the face having the recess is upward in the gravity direction, and applying a resist to the recess and face having the recess to form a resist film thereon, and disposing the substrate having the resist film formed thereon in such a manner that the face having the recess is downward in the gravity direction, and applying a liquid capable of dissolving the resist to the resist film to adjust the thickness of the resist film. A method for manufacturing a liquid ejection head is also provided.
Claims11
A substrate processing method comprising the steps of:
- (a1) disposing a substrate having a face having a recess, in such a manner that the face having a recess is upward in the direction of gravity, and applying a resist to the recess and to the face having the recess of the substrate to form a resist film thereon;
- and
- (a2) disposing the substrate having the resist film formed thereon, in such a manner that the face having the recess is downward in the direction of gravity, and applying a liquid capable of dissolving the resist, to the resist film to adjust the thickness of the resist film.
A method for manufacturing a liquid ejection head, comprising the steps of:
- (b1) forming a common ink-supply port which has a bottom face portion in a place between a front face and a back face of a silicon substrate, on the back face side of the silicon substrate which is provided on the front face side with a plurality of ink-ejecting pressure energy generating elements, which generate energy capable of ejecting a liquid, through a first etching process;
- (b2) applying a resist to the common ink-supply port and to a face of the substrate having the common ink-supply port to form a resist film thereon;
- (b3) applying a liquid capable of dissolving the resist to the resist film to adjust the thickness of the resist film;
- (b4) patterning the resist film on the bottom face portion of the common ink-supply port;
- and
- (b5) etching the bottom face portion so as to penetrate the silicon substrate through a second etching process with the use of the patterning of the resist film, wherein
- the step b2 comprises disposing the substrate in such a manner that the face having the common ink-supply port is upward in the direction of gravity, and the step b3 comprises disposing the substrate having the resist film formed thereon in such a manner that the face having the common ink-supply port is downward in the direction of gravity.
Dependencies are inferred from the claim text.