Pattern forming method, manufacturing method of semiconductor device, and template manufacturing method
AssigneeKabushiki Kaisha Toshiba
InventorsSeiro MIYOSHI, Hidefumi MUKAI, Takeshi KOSHIBA
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Abstract
In the pattern forming method according to the embodiment, second templates are manufactured by an imprint technology using first templates manufactured by applying a predetermined misalignment distribution for each shot on a first substrate by an exposure apparatus. Then, an upper-layer-side pattern is formed by an imprint technology using a second template in which an inter-layer misalignment amount between a lower-layer-side pattern already formed above a second substrate and the upper-layer-side pattern to be formed above the second substrate becomes equal to or lower than a predetermined reference value.
Claims20
A method of forming a pattern comprising:
- forming a first on-substrate pattern by applying a predetermined misalignment distribution for each shot above a first substrate by an exposure apparatus and thereafter manufacturing first templates by cutting off the first on-substrate pattern out of the first substrate for each shot;
- manufacturing second templates by transferring template patterns of the first templates onto a template substrate by an imprint technology;
- and
- forming a second on-substrate pattern as an upper-layer-side pattern above a second substrate by transferring a template pattern of a second template onto the second substrate by an imprint technology by using the second template in which an inter-layer misalignment amount that is a misalignment amount between a lower-layer-side pattern already formed above the second substrate and the upper-layer-side pattern to be formed above the second substrate becomes equal to or lower than a predetermined reference value.
A method of manufacturing a semiconductor device comprising:
- forming a lower-layer-side pattern above a semiconductor substrate by a photolithography technology or an imprint technology;
- forming a pattern forming film above the lower-layer-side pattern;
- and
- forming an upper-layer-side pattern by etching the pattern forming film, wherein
- the forming the upper-layer-side pattern includes
- forming a first on-substrate pattern by applying a predetermined misalignment distribution for each shot above a first substrate by an exposure apparatus and thereafter manufacturing first templates by cutting off the first on-substrate pattern out of the first substrate for each shot,
- manufacturing second templates by transferring template patterns of the first templates onto a template substrate by an imprint technology, and
- patterning a resist by transferring a template pattern of a second template onto the resist applied above the pattern forming film, by an imprint technology by using the second template in which an inter-layer misalignment amount that is a misalignment amount between the upper-layer-side pattern to be formed above the semiconductor device and the lower-layer-side pattern already formed becomes equal to or lower than a predetermined reference value.
A method of manufacturing a template comprising:
- forming an on-substrate pattern by applying a predetermined misalignment distribution for each shot above a substrate by an exposure apparatus and thereafter manufacturing first templates by cutting off the on-substrate pattern out of the substrate for each shot;
- and
- manufacturing second templates by transferring template patterns of the first templates onto a template substrate by an imprint technology.
Dependencies are inferred from the claim text.