Method for manufacturing semiconductor light emitting device

A method for manufacturing a semiconductor light emitting device, comprising:

• forming a first interconnect layer in a first opening provided in a first insulating layer included in a stacked body, the stacked body including:
• a substrate;
• a plurality of semiconductor layers separated by a separation trench on the substrate, each of the semiconductor layers including a first major surface, a second major surface opposite to the first major surface and a light emitting layer;
• a first electrode provided on a region including the light emitting layer on the second major surface opposite to the substrate;
• a second electrode provided on the second major surface;
• and
• the first insulating layer provided on the second major surface side and including the first opening communicating with the first electrode and a second opening communicating with the second electrode;
• forming a second interconnect layer in the second opening in the first insulating layer;
• forming a first metal pillar on a face of the first interconnect layer opposite to the first electrode;
• forming a second metal pillar on a face of the second interconnect layer opposite to the second electrode;
• forming a second insulating layer between a side face of the first metal pillar and a side face of the second metal pillar;
• forming a first phosphor layer on the first major surface;
• forming a transparent material on the first phosphor layer on a semiconductor layer selected from the plurality of semiconductor layers on the basis of an emission spectrum of a light obtained from the first phosphor layer side, the transparent material transmitting the light;
• and
• forming a second phosphor layer on the transparent material and the first phosphor layer.