Production method for a bulk sic single crystal with a large facet and monocrystalline sic substrate with homogeneous resistance distribution

A method for producing a bulk SiC single crystal, which comprises the steps of:

• disposing a seed crystal on a front end crucible wall in a crystal growth region of a growing crucible;
• producing an SiC growth gas phase in the crystal growth region, and the bulk SiC single crystal having a central longitudinal mid-axis grows by means of deposition from the SiC growth gas phase, the deposition taking place on a growth interface of the bulk SiC single crystal;
• feeding the SiC growth gas phase at least partially from an SiC source material, disposed in a supply region of the growing crucible, and contains at least one dopant selected from the group consisting of nitrogen, aluminum, vanadium and boron;
• and
• adjusting, at least in a central main growth region of the growth interface disposed about the longitudinal mid-axis, a lateral temperature gradient of at most 2 K/cm measured perpendicular to the longitudinal mid-axis and the lateral temperature gradient is maintained in this value range during an entire production period.