Method of graphene manufacturing
AssigneeInstytut Technologii Materialow Elektronicznych
InventorWlodzimierz Strupinski
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Abstract
The present invention relates to a method for manufacturing graphene by vapour phase epitaxy on a substrate comprising a surface of SiC, characterized in that the process of sublimation of silicon from the substrate is controlled by a flow of an inert gas or a gas other than an inert gas through the epitaxial reactor. The invention also relates to graphene obtained by this method.
Claims17
A method of graphene manufacturing by vapour phase epitaxy on a substrate comprising a surface of SiC characterized in that the process of sublimation of silicon from the substrate (3) is controlled by a flow of an inert gas (10) or a gas (12) other than an inert gas through the epitaxial reactor.
Graphene obtained by the aforementioned method.
Dependencies are inferred from the claim text.