Group-iii nitride monocrystal with improved purity and method of producing the same
AssigneeThe Regents of the University of California
InventorsDerrick S. Kamber, Siddha Pimputkar, Makoto Saito, Steven P. Denbaars, James S. Speck, Shuji Nakamura
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Abstract
A method to improve the crystal purity of a group-I11 nitride crystal grown in an ammonothermal growth system by removing any undesired material (i.e., impurities) from within the system prior to, in-between, or after the growth steps for the group-I11 nitride crystal. Impurities are removed from the ammonothermal growth system by first bringing the impurities into solution and then removing part or all of the solution from the growth system. The result is a high purity group-I11 nitride crystal grown in the ammonothermal growth system.
Claims22
A method for improving a purity of a group-III nitride crystal grown in an ammonothermal growth system, comprising:
- (a) bringing one or more impurities into solution within the growth system;
- and
- (b) removing part or all of the solution from the growth system, to remove some or all of the impurities from the growth system.
A method of purifying group-III containing source materials in a supercritical nitrogen-containing solvent, comprising:
- (a) placing at least one group-III containing source and at least one nitrogen-containing solvent in a vessel;
- (b) bringing one or more impurities into solution within the vessel;
- and
- (c) removing part or all of the solution from the vessel to remove some or all of the impurities from the growth system.
Dependencies are inferred from the claim text.