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US 2011/0299809 A1Published application
Optical Clock Signal Distribution Using Through-Silicon Vias
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShih-Cheng Chang, Jin-Lien Lin, Kuo-Ching Hsu, Kai-Ming Ching, Jiun Yi Wu, Yen-Huei Chen
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Abstract
An integrated circuit structure includes a semiconductor chip including a front surface and a back surface; a via extending from the back surface of the semiconductor chip into the semiconductor chip, wherein the via is light transparent; and a photon detector in the semiconductor chip and exposed to the via.
Claims20
An integrated circuit structure comprising:
- a photon detector formed in a substrate comprising:
- an n-well region;
- a plurality of n-type fingers;
- and
- a plurality of p-type fingers, wherein the plurality of n-type fingers and the plurality of p-type fingers are arranged in an alternating pattern and are separated from each other by the n-well region;
- a through via, wherein the photon detector is exposed to the through via;
- and
- an optical layer formed underneath the substrate.
5 more elements
An integrated circuit structure comprising:
- a photon detector formed in a first semiconductor layer comprising:
- an n-well region;
- a plurality of n-type fingers;
- and
- a plurality of p-type fingers, wherein the plurality of n-type fingers and the plurality of p-type fingers are arranged in an alternating pattern and are separated from each other by the n-well region;
- a through via, wherein the photon detector is exposed to the through via;
- a silicon-on-insulator structure comprising:
- an oxide layer;
- the first semiconductor layer;
- and
- a second semiconductor layer, wherein the oxide layer is formed between the first semiconductor layer and the second semiconductor layer;
- and
- an optical layer formed underneath the second semiconductor layer.
10 more elements
An integrated circuit structure comprising:
- a photon detector formed in a substrate comprising:
- an n-well region;
- a plurality of n-type fingers;
- and
- a plurality of p-type fingers, wherein the plurality of n-type fingers and the plurality of p-type fingers are arranged in an alternating pattern and are separated from each other by the n-well region;
- a through via, wherein the photon detector is exposed to the through via;
- and
- an optical layer formed underneath the substrate comprising:
- a multi-mode interface cavity;
- a first cladding material region;
- and
- a second cladding material region, wherein the multi-mode interface cavity is formed between the first cladding material region and the second cladding material region.
9 more elements
Dependencies are inferred from the claim text.