Semiconductor laser silicon waveguide substrate, and integrated device
AssigneeFujitsu Limited
InventorSuguru Akiyama
Life of this patent
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Abstract
A semiconductor laser includes: a first portion, made from a silicon-containing material, including an optical waveguide, a first diffraction grating including a phase shift, and a second diffraction grating; a second portion including a light-emitting layer made from a material different from that of the first portion; a laser region including the first diffraction grating, and the optical waveguide and the light-emitting layer provided in a position corresponding to the first diffraction grating; and a mirror region including the second diffraction grating, and the optical waveguide and the light-emitting layer provided in a position corresponding to the second diffraction grating.
Claims21
A semiconductor laser comprising:
- a first portion, made from a silicon-containing material, comprising an optical waveguide, a first diffraction grating comprising a phase shift, and a second diffraction grating;
- a second portion comprising a light-emitting layer made from a material different from that of the first portion;
- a laser region comprising the first diffraction grating, and the optical waveguide and the light-emitting layer provided in a position corresponding to the first diffraction grating;
- and
- a mirror region comprising the second diffraction grating, and the optical waveguide and the light-emitting layer provided in a position corresponding to the second diffraction grating.
A semiconductor laser comprising:
- a first portion, made from a silicon-containing material, comprising an optical waveguide comprising a rib-structure waveguide core and a first diffraction grating comprising a phase shift;
- and
- a second portion, made from a material different from that of the first portion, comprising a light-emitting layer provided where light propagating through the optical waveguide can evanescently couple,
- wherein the first diffraction grating is formed on sides of the rib-structure waveguide core.
A silicon waveguide substrate comprising:
- a silicon substrate;
- a silicon oxide film formed over the silicon substrate;
- a silicon layer, formed over the silicon oxide film, comprising a rib-structure waveguide core;
- a first diffraction grating, formed on sides of the rib-structure waveguide core, comprising a phase shift;
- and
- a second diffraction grating formed on the sides of the rib-structure waveguide core so as to be continuous with the first diffraction grating.
An integrated device comprising:
- a semiconductor laser comprising:
- a first portion, made from a silicon-containing material, comprising an optical waveguide, a first diffraction grating comprising a phase shift, and a second diffraction grating;
- a second portion comprising a light-emitting layer made from a material different from that of the first portion;
- a laser region comprising the first diffraction grating, and the optical waveguide and the light-emitting layer provided in a position corresponding to the first diffraction grating;
- and
- a mirror region comprising the second diffraction grating, and the optical waveguide and the light-emitting layer provided in a position corresponding to the second diffraction grating;
- and
- a functional device,
- wherein the semiconductor laser and the functional device are integrated on a single silicon substrate.
Dependencies are inferred from the claim text.